- 专利标题： Integrated circuit chip reinforced against front side deprocessing attacks
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申请号： US15606212申请日： 2017-05-26
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公开(公告)号： US10186491B2公开(公告)日： 2019-01-22
- 发明人: Sébastien Petitdidier , Mathieu Lisart
- 申请人： STMicroelectronics (Crolles 2) SAS , STMicroelectronics (Rousset) SAS
- 申请人地址： FR Crolles FR Rousset
- 专利权人： STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Rousset) SAS
- 当前专利权人： STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Rousset) SAS
- 当前专利权人地址： FR Crolles FR Rousset
- 代理机构： Crowe & Dunlevy
- 优先权： FR1659803 20161011
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/768 ; H01L23/522
摘要：
An integrated circuit chip includes an interconnection stack with a cavity formed therein. The cavity extends through one or more interconnection levels of the stack. A material at least partially fills the cavity. The fill material has a selectivity to polishing and/or to etching different by more than 10% from a selectivity to polishing and/or to etching of a material forming an insulator of the interconnection stack.
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