- 专利标题： Contaminant removal in ultra-thin semiconductor device fabrication
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申请号： US15343946申请日： 2016-11-04
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公开(公告)号： US10192732B2公开(公告)日： 2019-01-29
- 发明人: Qin Xu Yu , Tian Yi Zhang , Jian Jun Kong
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/683 ; H01L21/285 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/06 ; H01L29/40 ; H01L29/10
摘要：
A chemical solution cleaning process for removing backside contamination prior to metallization involves selective chemistries of a mixture containing NH4OH and H2O2 that may be diluted to specific concentrations depending upon the topside metal and passivation of a semiconductor wafer, which is applied after removing a topside protection material to protect the topside circuitry.
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