- 专利标题: Semiconductor device
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申请号: US14915860申请日: 2013-09-06
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公开(公告)号: US10193323B2公开(公告)日: 2019-01-29
- 发明人: Kei Hayashi
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2013/074151 WO 20130906
- 国际公布: WO2015/033449 WO 20150312
- 主分类号: H02H3/08
- IPC分类号: H02H3/08 ; H03K17/14 ; H03K17/082 ; H03K17/08
摘要:
A semiconductor device includes a semiconductor switching element, a correction current voltage generation circuit, a voltage dividing circuit, an overcurrent protection circuit, and a drive circuit. The switching element is capable of outputting a sense current from its sense terminal. A sense resistor receives the sense current from the sense terminal and produces a sense voltage. The correction current voltage generation circuit generates a correction voltage. The voltage dividing circuit can output a corrected sense voltage by performing resistance voltage dividing on the sense voltage and the correction voltage with resistors. The overcurrent protection circuit is supplied with the corrected sense voltage and outputs a halt signal to the drive circuit when the corrected sense voltage Vin is higher than a threshold voltage.
公开/授权文献
- US20160211657A1 SEMICONDUCTOR DEVICE 公开/授权日:2016-07-21
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