-
公开(公告)号：US20240302415A1
公开(公告)日：2024-09-12
申请号：US18120383
申请日：2023-03-11
发明人： HAIYIN LI
CPC分类号： G01R19/32 , G01R19/0092 , H01L29/7815 , H01L29/7826 , H03K17/145 , H03K2217/0027
摘要： A power stage, comprising of multiple power MOSFETs and control and monitoring circuits, is an important part of voltage regulators. The voltage regulator controller typically monitors the power stage output current to implement control and protection functions. Traditional power stages mostly adapt monolithic solutions, suffering from performance inefficiencies due to the LDMOS process, while co-packaged solutions with combined VDMOS and LDMOS processes suffer from potential large current monitoring errors due to different operating temperatures. The current invention proposes a current monitoring circuit with temperature compensation to cancel the temperature coefficient mismatch between the external power MOSFET and the current monitoring circuit. Therefore, the gain of the current monitoring circuit doesn't change with the temperature, allowing for high current monitoring precision, and the temperature compensation circuit doesn't affect the bandwidth of the current monitoring circuit, allowing the use of the output current monitoring signal for close-loop control and over-current protection.
-
公开(公告)号：US12028054B1
公开(公告)日：2024-07-02
申请号：US18529272
申请日：2023-12-05
申请人： ASPINITY, INC.
IPC分类号： H03K17/14
CPC分类号： H03K17/14
摘要： According to some embodiments, re-programmable and/or reconfigurable analog circuitry may be provided. A plurality of reference floating-gate transistors are each programmable to be connectable to a plurality of global reference control lines of the analog circuitry to facilitate temperature compensation. In some embodiments, the plurality of analog nonvolatile memory cells are associated with parameter floating-gate transistors. Moreover, the plurality of analog parameter nonvolatile memory cells may be programmed to several orders of parameter magnitude.
-
公开(公告)号：US11916546B2
公开(公告)日：2024-02-27
申请号：US17185564
申请日：2021-02-25
发明人： Semen Syroiezhin , Ivan Jevtic , Valentyn Solomko
IPC分类号： H03K17/74 , H03K17/14 , H03K17/16 , H03K17/041 , H04B1/44
CPC分类号： H03K17/16 , H03K17/04106 , H03K17/74 , H03K17/145 , H03K2217/0054 , H03K2217/0081 , H04B1/44
摘要： A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
-
公开(公告)号：US11916545B2
公开(公告)日：2024-02-27
申请号：US17296868
申请日：2019-12-19
发明人： Benno Weis , Fabian Diepold
IPC分类号： H03K17/14 , G01R19/175 , H03K17/30 , H03K17/08 , G01R19/165
CPC分类号： H03K17/145 , G01R19/16538 , G01R19/175 , H03K17/302 , H03K2017/0806
摘要： A method for operating a normally off or normally on power semiconductor element. A threshold voltage change in a threshold voltage of the power semiconductor element in relation to a reference threshold voltage is determined. A switch-on gate voltage is applied between a gate terminal and a source terminal of the power semiconductor element for the purpose of switching on the power semiconductor element is changed by the threshold voltage change in relation to a reference switch-on gate voltage corresponding to the reference threshold voltage.
-
公开(公告)号：US20230412165A1
公开(公告)日：2023-12-21
申请号：US18238706
申请日：2023-08-28
发明人： Darryl G. Walker
IPC分类号： H03K17/14 , G01K7/01 , G01K1/14 , G05F3/26 , G06F1/08 , G11C11/406 , G11C11/419 , H01L23/34 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/786 , G01K3/00 , G11C11/402
CPC分类号： H03K17/145 , G01K7/01 , G01K1/14 , G05F3/265 , G06F1/08 , G11C11/40626 , G11C11/419 , H01L23/34 , H01L27/092 , H01L29/0665 , H01L29/42392 , H01L29/78696 , G01K3/005 , G11C11/4026
摘要： An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.
-
公开(公告)号：US20230378952A1
公开(公告)日：2023-11-23
申请号：US18317223
申请日：2023-05-15
申请人： Airbus SAS
CPC分类号： H03K17/145 , H03K17/18 , B60L3/0084 , B64D2221/00 , H03K2017/0806
摘要： An electronic circuit comprising a power transistor of the MOSFET type comprising a gate connected to a control circuit of the gate. The control circuit of the gate configured to operate at a temperature called ambient temperature, non-cryogenic. The power transistor as well as an interfacing circuit connected between said gate and said control circuit configured to operate at a cryogenic temperature. Each component of the interfacing circuit established at a maximum distance (L) from the power transistor. At least one measurement means configured to measure at least one measurement signal, representative of a junction temperature of the power transistor, is connected between the interfacing circuit operating at a cryogenic temperature and the control circuit operating at ambient temperature.
-
公开(公告)号：US20230353038A1
公开(公告)日：2023-11-02
申请号：US18245428
申请日：2020-11-18
发明人： Toshiki ASAI , Akihiro TSUMURA
CPC分类号： H02M1/08 , H02M1/0009 , H02M7/537 , H03K17/145 , H03K17/0812
摘要： A power supply control device includes: a power conversion device; a controller; a current detection device; a comparison device configured to output a shut-off start signal when a value of current detected by the current detection device is larger than a preset current threshold value; a shut-off device configured to shut off, based on a shut-off control signal, a conversion operation signal; a latch device configured to output the shut-off control signal based on the shut-off start signal output by the comparison device and to perform, until a latch release signal is input, a latch operation, in which the shut-off device is caused to maintain a state in which a conversion operation signal is shut off; and a delay device configured to output a latch release signal after a delay time elapses, the delay time being determined by components of the delay device.
-
公开(公告)号：US20230291397A1
公开(公告)日：2023-09-14
申请号：US18173785
申请日：2023-02-24
发明人： Chien-Tsu YEH , Hsi-En LIU , Yi-Chun HSIEH
CPC分类号： H03K17/14 , H03K5/01 , H03K2005/00286
摘要： A signal converting circuit includes a phase interpolator circuit and a bias voltage generation circuit. The phase interpolator circuit is configured to convert a plurality of input clock signals into an output clock signal according to a digital signal. The bias voltage generation circuit is electrically coupled to the phase interpolator circuit, is configured to generate a bias voltage according to a reference information and is configured to output the bias voltage to the phase interpolator circuit, so that the output clock signal has a predetermined phase corresponding to one of a plurality of bit configurations of the digital signal, wherein the reference information is relevant to a change of the phase interpolator circuit due to a temperature variation.
-
公开(公告)号：US11689096B2
公开(公告)日：2023-06-27
申请号：US17869339
申请日：2022-07-20
发明人： Ofir Bieber
摘要： A driver for improving reliability of a switch in a power device, comprising one or more sensors configured to sense an operational parameter of a power device. The driver comprises a controller configured to receive one or more sensor values from the respective sensors. The controller is configured to adjust a driving pulse according to the sensor values. The controller is configured to apply the driving pulse to one or more control terminal of one or more switch of the power device.
-
公开(公告)号：US20230088630A1
公开(公告)日：2023-03-23
申请号：US17921432
申请日：2021-04-19
申请人： ams International AG
发明人： Vincenzo LEONARDO
摘要： A power on reset circuit comprises terminals for reference and supply potentials and a voltage divider coupled therebetween. First and second transistors of a bandgap circuit are resistively coupled to the reference potential terminal and have bases connected to the voltage divider. Current mirrors couple the collectors of the first and second transistors to an output terminal providing an output signal indicating a power on reset condition. A first compensation transistor is coupled between the collector of one of the transistors and the reference potential terminal, and a second compensation transistor is coupled between the output terminal and the reference potential terminal to compensate the effect of parasitic substrate currents in response to an external interference.
-
-
-
-
-
-
-
-
-
搜索结果
1080 条记录 (耗时 0.017 秒)
