Invention Grant
- Patent Title: Partial metal fill for preventing extreme-low-k dielectric delamination
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Application No.: US15268479Application Date: 2016-09-16
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Publication No.: US10194529B2Publication Date: 2019-01-29
- Inventor: Zhongze Wang , Guoqing Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H05K3/40 ; H05K3/42 ; H01F27/28 ; H01F27/29 ; H01F41/04 ; H01L23/522 ; H01L23/528 ; H01F17/00 ; H01L23/532
Abstract:
A partial metal fill is provided within the footprint of an ultra-thick-metal (UTM) conductor on a dielectric layer to strengthen the dielectric layer to inhibit delamination of the UTM conductor without inducing significant electrical coupling between the UTM conductor and the partial metal fill.
Public/Granted literature
- US20180082776A1 PARTIAL METAL FILL FOR PREVENTING EXTREME-LOW-K DIELECTRIC DELAMINATION Public/Granted day:2018-03-22
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