Invention Grant
- Patent Title: Capacitor
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Application No.: US15806112Application Date: 2017-11-07
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Publication No.: US10199166B2Publication Date: 2019-02-05
- Inventor: No Il Park , Byeong Cheol Moon , Il Ro Lee , Hyun Ho Shin , Seung Mo Lim , In Young Kang
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2017-0066229 20170529
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K1/18 ; H05K7/00 ; H01G4/06 ; H01G4/30 ; H01G4/228

Abstract:
A capacitor includes: a substrate including a plurality of trenches and a capacitance formation portion, and a margin portion disposed around the capacitance formation portion; dielectric layers disposed on one surface of the substrate and filling the trenches; a plurality of first electrode layers each disposed on one surface of the dielectric layer and each including a first lead portion led out from the capacitance formation portion to the margin portion; and a plurality of second electrode layers each disposed on one surface of the dielectric layer to face the first electrode layer with each of the dielectric layers interposed therebetween, and each including a second lead portion led out from the capacitance formation portion to the margin portion, wherein the first and second lead portions of the plurality of first and second electrode layers are stacked in a stepped shape inclined in a direction from the margin portion to the capacitance formation portion.
Public/Granted literature
- US20180342352A1 CAPACITOR Public/Granted day:2018-11-29
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