- 专利标题: Fabrication method of circuit structure
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申请号: US15615158申请日: 2017-06-06
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公开(公告)号: US10201090B2公开(公告)日: 2019-02-05
- 发明人: Shao-Tzu Tang , Ying-Chou Tsai
- 申请人: Siliconware Precision Industries Co., Ltd.
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 代理机构: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless; Steven M. Jensen
- 优先权: TW103120816A 20140617
- 主分类号: H05K1/00
- IPC分类号: H05K1/00 ; H05K3/00 ; H05K1/11
摘要:
A circuit structure is provided, which includes a plurality of conductive posts, and a plurality of first and second conductive pads formed on two opposite end surfaces of the conductive posts, respectively. A length of each of the first conductive pads is greater than a width of the first conductive pad so as to reduce an occupation area of the first conductive pad along the width and increase a distance between adjacent first conductive pads, thereby increasing the wiring density and meeting the wiring demand.
公开/授权文献
- US20170273185A1 FABRICATION METHOD OF CIRCUIT STRUCTURE 公开/授权日:2017-09-21
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