Invention Grant
- Patent Title: Fabrication method of circuit structure
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Application No.: US15615158Application Date: 2017-06-06
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Publication No.: US10201090B2Publication Date: 2019-02-05
- Inventor: Shao-Tzu Tang , Ying-Chou Tsai
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103120816A 20140617
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K3/00 ; H05K1/11

Abstract:
A circuit structure is provided, which includes a plurality of conductive posts, and a plurality of first and second conductive pads formed on two opposite end surfaces of the conductive posts, respectively. A length of each of the first conductive pads is greater than a width of the first conductive pad so as to reduce an occupation area of the first conductive pad along the width and increase a distance between adjacent first conductive pads, thereby increasing the wiring density and meeting the wiring demand.
Public/Granted literature
- US20170273185A1 FABRICATION METHOD OF CIRCUIT STRUCTURE Public/Granted day:2017-09-21
Information query