Invention Grant
- Patent Title: Methods for selective etching of a silicon material using HF gas without nitrogen etchants
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Application No.: US15823083Application Date: 2017-11-27
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Publication No.: US10204796B2Publication Date: 2019-02-12
- Inventor: Nitin K. Ingle , Anchuan Wang , Zihui Li , Mikhail Korolik
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/308 ; H01J37/32 ; H01L21/311 ; H01L21/3213
Abstract:
The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.
Public/Granted literature
- US20180082849A1 METHODS FOR SELECTIVE ETCHING OF A SILICON MATERIAL USING HF GAS WITHOUT NITROGEN ETCHANTS Public/Granted day:2018-03-22
Information query
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