Invention Grant
- Patent Title: Electrostatic discharge protection semiconductor device
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Application No.: US15484143Application Date: 2017-04-11
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Publication No.: US10204897B2Publication Date: 2019-02-12
- Inventor: Chung-Yu Huang , Kuan-Cheng Su , Tien-Hao Tang , Ping-Jui Chen , Po-Ya Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW104133798A 20151015
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/78

Abstract:
An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a doped region formed in the source region. The source region and the drain region include a first conductivity type, and the doped region includes a second conductivity type complementary to the first conductivity type. The doped region is electrically connected to a ground potential.
Public/Granted literature
- US20170221876A1 ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE Public/Granted day:2017-08-03
Information query
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