- 专利标题: Method for manufacturing a light emitting diode chip
-
申请号: US15822227申请日: 2017-11-27
-
公开(公告)号: US10205048B1公开(公告)日: 2019-02-12
- 发明人: Po-Min Tu , Tzu-Chien Hung , Chia-Hui Shen , Chien-Shiang Huang , Chien-Chung Peng
- 申请人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 申请人地址: TW Hsinchu Hsien
- 专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
- 当前专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
- 当前专利权人地址: TW Hsinchu Hsien
- 代理机构: ScienBiziP, P.C.
- 优先权: CN201711047753 20171031
- 主分类号: H01L33/38
- IPC分类号: H01L33/38 ; H01L33/00 ; H01L33/44
摘要:
A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.
信息查询
IPC分类: