Invention Grant
- Patent Title: Method for photo-lithographic processing in semiconductor device manufacturing
-
Application No.: US15237840Application Date: 2016-08-16
-
Publication No.: US10211050B2Publication Date: 2019-02-19
- Inventor: Hidetami Yaegashi , Kenichi Oyama , Masatoshi Yamato , Tomohiro Iseki , Toyohisa Tsuruda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2014-165364 20140815
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/36 ; G03F7/004 ; H01L21/027 ; H01L21/31 ; H01L21/469
Abstract:
There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.
Public/Granted literature
- US20160358769A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2016-12-08
Information query
IPC分类:
