Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15961334Application Date: 2018-04-24
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Publication No.: US10211216B2Publication Date: 2019-02-19
- Inventor: Shibun Tsuda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: JP2016-135766 20160708
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/11568 ; H01L27/11573 ; H01L29/423 ; H01L29/78 ; H01L29/792 ; H01L21/28 ; H01L29/66 ; H01L27/1157 ; H01L21/762 ; H01L21/8234

Abstract:
A semiconductor device includes a semiconductor substrate including a main surface, a plurality of first projecting portions which include portions of the semiconductor substrate provided in a first region of the semiconductor substrate to extend in a first direction along the main surface of the semiconductor substrate and to be spaced apart from each other in a second direction, orthogonal to the first direction, along the main surface of the semiconductor substrate, a first isolation region provided between the first projecting portions adjacent to each other, and first and second transistors provided in and over an upper part of each of the first projecting portions which is exposed from an upper surface of the first isolation region to be adjacent to each other in the first direction.
Public/Granted literature
- US20180247952A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-08-30
Information query
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