- 专利标题： P-doping of group-III-nitride buffer layer structure on a heterosubstrate
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申请号： US16026630申请日： 2018-07-03
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公开(公告)号： US10211296B2公开(公告)日： 2019-02-19
- 发明人: Stephan Lutgen , Saad Murad , Ashay Chitnis
- 申请人： AZURSPACE Solar Power GmbH
- 申请人地址： DE Heilbronn
- 专利权人： AzurSpace Solar Power GmbH
- 当前专利权人： AzurSpace Solar Power GmbH
- 当前专利权人地址： DE Heilbronn
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： EP13155540 20130215
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L29/205 ; H01L29/36 ; H01L29/778 ; H01L29/872 ; H01L33/00 ; H01L29/15 ; H01L21/02 ; H01L29/20 ; H01L29/207 ; H01L29/10
摘要：
An epitaxial group-III-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-III-nitride layers, wherein the interlayer structure comprises a group-III-nitride interlayer material having a larger band gap than the materials of the first and second group-III-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm−3, by at least a factor of two in transition from the interlayer structure to the first and second group-III-nitride layers.