公开(公告)号：US10658500B2

公开(公告)日：2020-05-19

申请号：US16185562

申请日：2018-11-09

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/10 ,  H01L29/20

摘要： A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer.

公开(公告)号：US10026814B2

公开(公告)日：2018-07-17

申请号：US15700289

申请日：2017-09-11

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad ,  Ashay Chitnis

IPC分类号： H01L29/12 ,  H01L31/072 ,  H01L23/48 ,  H01L21/338 ,  H01L21/337 ,  H01L21/3205 ,  H01L29/205 ,  H01L29/15 ,  H01L21/02 ,  H01L29/872 ,  H01L29/778 ,  H01L29/36 ,  H01L29/10 ,  H01L29/207 ,  H01L29/20 ,  H01L33/00

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm−3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

公开(公告)号：US10211296B2

公开(公告)日：2019-02-19

申请号：US16026630

申请日：2018-07-03

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad ,  Ashay Chitnis

IPC分类号： H01L29/12 ,  H01L29/205 ,  H01L29/36 ,  H01L29/778 ,  H01L29/872 ,  H01L33/00 ,  H01L29/15 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207 ,  H01L29/10

摘要： An epitaxial group-III-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-III-nitride layers, wherein the interlayer structure comprises a group-III-nitride interlayer material having a larger band gap than the materials of the first and second group-III-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm−3, by at least a factor of two in transition from the interlayer structure to the first and second group-III-nitride layers.

公开(公告)号：US09786744B2

公开(公告)日：2017-10-10

申请号：US15341590

申请日：2016-11-02

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad ,  Ashay Chitnis

IPC分类号： H01L29/12 ,  H01L31/0336 ,  H01L23/52 ,  H01L21/338 ,  H01L21/337 ,  H01L21/28 ,  H01L29/205 ,  H01L29/36 ,  H01L29/778 ,  H01L29/872 ,  H01L33/00 ,  H01L29/15 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207 ,  H01L29/10

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

公开(公告)号：US09496349B2

公开(公告)日：2016-11-15

申请号：US14828148

申请日：2015-08-17

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad ,  Ashay Chitnis

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L23/52 ,  H01L21/338 ,  H01L21/8249 ,  H01L21/3205 ,  H01L29/205 ,  H01L29/36 ,  H01L29/778 ,  H01L29/872 ,  H01L33/00 ,  H01L29/15 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

摘要翻译： 外延基团氮化物缓冲层结构提供在异质基底上，其中缓冲层结构具有至少一个应力管理层序列，其包括布置在第一和第二组 - 氮化物层，其中所述层间结构包括具有比所述第一和第二组氮化物层的材料更大的带隙的组氮化物中间层材料，并且其中p型掺杂剂浓度分布下降，起始 从层间结构向第一和第二组氮化物层转变的至少1×10 18 cm -3至少两倍。

公开(公告)号：US10128362B2

公开(公告)日：2018-11-13

申请号：US15699251

申请日：2017-09-08

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/10 ,  H01L29/20

摘要： A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer.

公开(公告)号：US09773896B2

公开(公告)日：2017-09-26

申请号：US14828342

申请日：2015-08-17

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan Lutgen ,  Saad Murad

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L29/778 ,  H01L29/205 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7783

摘要： A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer.