Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US14926737Application Date: 2015-10-29
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Publication No.: US10217870B2Publication Date: 2019-02-26
- Inventor: Sachiaki Tezuka , Hideomi Suzawa , Akihisa Shimomura , Tetsuhiro Tanaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2013-025140 20130213; JP2013-038705 20130228
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L29/24 ; H01L29/66
Abstract:
A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.
Public/Granted literature
- US20160049521A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-02-18
Information query
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