公开(公告)号：US10923600B2

公开(公告)日：2021-02-16

申请号：US16044600

申请日：2018-07-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/49

摘要： A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US10276724B2

公开(公告)日：2019-04-30

申请号：US15204015

申请日：2016-07-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yutaka Okazaki ,  Akihisa Shimomura ,  Naoto Yamade ,  Tomoya Takeshita ,  Tetsuhiro Tanaka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

摘要： A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US10032928B2

公开(公告)日：2018-07-24

申请号：US15417266

申请日：2017-01-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US09935203B2

公开(公告)日：2018-04-03

申请号：US15696231

申请日：2017-09-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shinya Sasagawa ,  Takashi Hamada ,  Akihisa Shimomura ,  Satoru Okamoto ,  Katsuaki Tochibayashi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423 ,  H01L21/4763

CPC分类号： H01L29/7869 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

摘要： A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

公开(公告)号：US09899419B2

公开(公告)日：2018-02-20

申请号：US14924100

申请日：2015-10-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  B23K26/073 ,  H01L21/20 ,  H01L21/84 ,  H01L29/66

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US09748099B2

公开(公告)日：2017-08-29

申请号：US14145235

申请日：2013-12-31

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC分类号： H01L21/02 ,  H01L21/268 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/283 ,  B23K26/00 ,  B23K101/40 ,  H01L27/146

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.

公开(公告)号：US09698277B2

公开(公告)日：2017-07-04

申请号：US14963945

申请日：2015-12-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Ryo Tokumaru ,  Yuhei Sato ,  Kazuhiro Tsutsui

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

摘要： A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

公开(公告)号：US09666755B2

公开(公告)日：2017-05-30

申请号：US13687354

申请日：2012-11-28

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura

IPC分类号： H01L33/00 ,  H01L51/52

CPC分类号： H01L33/0095 ,  H01L51/5246

摘要： Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass.

公开(公告)号：US09466725B2

公开(公告)日：2016-10-11

申请号：US14156892

申请日：2014-01-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66969

摘要： A miniaturized transistor having high electrical characteristics can be provided with high yield. High performance, high reliability, and high productivity of a semiconductor device including the transistor can be achieved. The semiconductor device includes a gate electrode over an insulating surface; a base insulating film which is over the insulating surface and from which the gate electrode protrudes; a gate insulating film over the base insulating film and the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode in contact with an oxide semiconductor film. The thickness of the oxide semiconductor film is smaller than the difference between the thickness of the gate electrode and the thickness of the base insulating film.

摘要翻译： 可以以高产率提供具有高电特性的小型化晶体管。 可以实现包括晶体管的半导体器件的高性能，高可靠性和高生产率。 半导体器件包括绝缘表面上的栅电极; 在绝缘表面上并且栅电极突出的基极绝缘膜; 基极绝缘膜和栅电极上的栅极绝缘膜; 栅极绝缘膜上的氧化物半导体膜; 以及与氧化物半导体膜接触的源电极和漏电极。 氧化物半导体膜的厚度小于栅电极的厚度与基底绝缘膜的厚度之差。

公开(公告)号：US09276125B2

公开(公告)日：2016-03-01

申请号：US14190370

申请日：2014-02-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Tomoaki Moriwaka ,  Daigo Ito

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/66742 ,  H01L29/66969

摘要： A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film.

摘要翻译： 提供具有高电特性的小型化晶体管，其产率高。 在包括晶体管的半导体器件中，可以实现高性能，高可靠性和高生产率。 半导体器件包括基底绝缘膜，底表面的氧化物半导体膜和基底绝缘膜中的侧表面以及从基底绝缘膜暴露的顶表面，在基底绝缘膜上的源电极和漏电极以及 氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，源电极和漏电极以及栅极绝缘膜上的与电极半导体膜重叠的栅电极。