- 专利标题: Current detection method of semiconductor device and semiconductor device
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申请号: US15823217申请日: 2017-11-27
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公开(公告)号: US10222403B2公开(公告)日: 2019-03-05
- 发明人: Osamu Soma , Akira Uemura , Kenji Amada
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2015-082772 20150414
- 主分类号: G01R19/32
- IPC分类号: G01R19/32 ; G01R1/20 ; G01R15/09
摘要:
A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.
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