-
公开(公告)号：US11128131B2
公开(公告)日：2021-09-21
申请号：US16554207
申请日：2019-08-28
发明人： Naohiro Yoshimura , Osamu Soma
摘要： The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.
-
公开(公告)号：US10859624B2
公开(公告)日：2020-12-08
申请号：US15366985
申请日：2016-12-01
发明人： Akira Uemura , Osamu Soma
IPC分类号： G01R31/26 , H02H1/00 , H01L27/02 , H01L27/06 , H01L25/065 , H01L25/18 , H01L23/495 , G01R31/00 , G01K13/00 , B60L1/16 , G01K7/01 , G01K3/00 , H02H3/087 , B60L58/10 , H01L23/00
摘要： A semiconductor device includes first and second semiconductor chips mounted on one package. In the first semiconductor chip, a current generation circuit generates a sense current in accordance with a load current and a fault current indicating that an abnormality detection circuit has detected an abnormality, and allows either one of the currents to flow through a current detecting resistor in accordance with presence or absence of detection of the abnormality. In the second semiconductor chip, a storage circuit stores a current value of the fault current obtained in an inspection process of the semiconductor device as a determination reference value. An arithmetic processing circuit sets a standard range based on the determination reference value, and determines presence or absence of detection of the abnormality based on whether or not a current value indicated by a digital signal of an analog-digital conversion circuit is included within the standard range.
-
公开(公告)号：US10222403B2
公开(公告)日：2019-03-05
申请号：US15823217
申请日：2017-11-27
发明人： Osamu Soma , Akira Uemura , Kenji Amada
摘要： A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.
-
公开(公告)号：US10115251B2
公开(公告)日：2018-10-30
申请号：US15141676
申请日：2016-04-28
发明人： Osamu Soma , Akira Uemura
摘要： A sophisticated semiconductor device is provided. A semiconductor device including an IPD chip and an MCU chip which are included in one package. The IPD chip includes: a power transistor that drives an external load; a gate drive circuit that drives the power transistor; and a protection circuit that protects the power transistor from having a breakdown. The MCU chip includes an arithmetic processing unit that performs arithmetic processing based on detected data output from the protection circuit, and a storage unit that stores a program for the arithmetic processing unit. The MCU chip has a function of controlling operation of the power transistor according to the detected data.
-
公开(公告)号：US09835660B2
公开(公告)日：2017-12-05
申请号：US15068929
申请日：2016-03-14
发明人： Osamu Soma , Akira Uemura , Kenji Amada
摘要： A semiconductor device with the highly precise current detecting function is provided. Current detection is performed using a semiconductor device in which two semiconductor chips are mounted in one package. The first semiconductor chip is provided with an electric power supply transistor to supply power to a load via a load driving terminal, and a current detection circuit to detect a current flowing through the load driving terminal. In the inspection process of the semiconductor device, the electrical property of the current detection circuit in the first semiconductor chip is inspected, and the information on a correction equation obtained as the inspection result is written in a memory circuit of the second semiconductor chip. The second semiconductor chip corrects the detection result obtained by the current detection circuit based on the information on the correction equation written in the memory circuit concerned.
-
公开(公告)号：US20170184658A1
公开(公告)日：2017-06-29
申请号：US15366985
申请日：2016-12-01
发明人： Akira Uemura , Osamu Soma
IPC分类号： G01R31/26 , H02H3/08 , H02H1/00 , H01L27/02 , H01L27/06 , H01L25/065 , H01L25/18 , H01L23/495 , H01L23/00 , G01R31/00 , G01K13/00 , B60L1/16 , B60L11/18 , B60R16/02 , B60R16/033 , H02H3/10
CPC分类号： G01R31/26 , B60L1/16 , B60L58/10 , G01K3/005 , G01K7/01 , G01K13/00 , G01R31/006 , H01L23/49541 , H01L23/49575 , H01L24/48 , H01L25/0655 , H01L25/18 , H01L27/0207 , H01L27/0248 , H01L27/0617 , H01L2224/48247 , H01L2924/00014 , H01L2924/1207 , H01L2924/13091 , H01L2924/14253 , H01L2924/1426 , H01L2924/1434 , H02H1/0007 , H02H3/087 , Y02T10/7005 , Y02T10/705 , H01L2224/05599 , H01L2224/45099 , H01L2224/85399
摘要： A semiconductor device includes first and second semiconductor chips mounted on one package. In the first semiconductor chip, a current generation circuit generates a sense current in accordance with a load current and a fault current indicating that an abnormality detection circuit has detected an abnormality, and allows either one of the currents to flow through a current detecting resistor in accordance with presence or absence of detection of the abnormality. In the second semiconductor chip, a storage circuit stores a current value of the fault current obtained in an inspection process of the semiconductor device as a determination reference value. An arithmetic processing circuit sets a standard range based on the determination reference value, and determines presence or absence of detection of the abnormality based on whether or not a current value indicated by a digital signal of an analog-digital conversion circuit is included within the standard range.
-
公开(公告)号：US09530721B2
公开(公告)日：2016-12-27
申请号：US14871769
申请日：2015-09-30
IPC分类号： H01L23/48 , H01L23/495 , H01L23/31 , H01L23/58 , H01L25/065
CPC分类号： H01L23/49503 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L23/49575 , H01L23/585 , H01L25/0655 , H01L2224/05554 , H01L2224/32245 , H01L2224/33505 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48111 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/73265 , H01L2224/92247 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device includes first and second semiconductor chips, a plurality of leads, a plurality of wires, and a sealing body sealing those components. A first pad electrode, a second pad electrode, and an internal wiring electrically connected to the first and second electrode pads are formed on a main surface of the first semiconductor chip. A third pad electrode of the second semiconductor chip is electrically connected to the first electrode pad of the first semiconductor chip via a first wire, and the second electrode pad of the first semiconductor chip is electrically connected to a first lead via a second wire. A distance between the first lead and the first semiconductor chip is smaller than a distance between the first lead and the second semiconductor chip. The first electrode pad, the second electrode pad and the internal wiring are not connected to any circuit formed in the first semiconductor chip.
摘要翻译： 半导体器件包括第一和第二半导体芯片，多个引线，多个引线和密封这些部件的密封体。 电连接到第一和第二电极焊盘的第一焊盘电极，第二焊盘电极和内部布线形成在第一半导体芯片的主表面上。 第二半导体芯片的第三焊盘电极经由第一导线电连接到第一半导体芯片的第一电极焊盘，第一半导体芯片的第二电极焊盘经由第二导线电连接到第一引线。 第一引线和第一半导体芯片之间的距离小于第一引线和第二半导体芯片之间的距离。 第一电极焊盘，第二电极焊盘和内部布线不连接到形成在第一半导体芯片中的任何电路。
-
公开(公告)号：US09500704B2
公开(公告)日：2016-11-22
申请号：US14184230
申请日：2014-02-19
发明人： Osamu Soma
IPC分类号： G01R31/28 , G01R31/317
CPC分类号： G01R31/31715 , G01R31/2851
摘要： A semiconductor device includes: a drive circuit; a standby circuit; and a detection circuit. The drive circuit turns on an output transistor connected to a load based on an active input signal. The standby circuit intermittently outputs an output signal based on a non-active input signal. The detection circuit measures voltage of a load side of the output transistor based on the output signal and output a measurement result.
摘要翻译： 一种半导体器件包括：驱动电路; 备用电路; 和检测电路。 驱动电路基于有源输入信号接通连接到负载的输出晶体管。 备用电路基于非有效输入信号间歇地输出输出信号。 检测电路基于输出信号测量输出晶体管的负载侧的电压，并输出测量结果。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.016 秒)
