A hybrid memory includes a plurality of tiles including a plurality of rows including a first row having a first type of memory cells and a second row having a second type of memory cells; a pair of bitline select signals including a bitline select signal and a bitline select bar signal that is an inverse of the bitline select signal; a wordline driver that is configured to receive an input data; a sense amplifier that is configured to output an output data; a write bitline coupled to the first row and the second row; a read bitline coupled to the first row and the second row; a wordline coupled to each of the plurality of rows; and a bitline that is coupled to the write bitline and the read bitline based on set values of the pair of bitline select signals.