- 专利标题: Power conversion device with gate drive circuit
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申请号: US15575963申请日: 2015-05-22
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公开(公告)号: US10230294B2公开(公告)日: 2019-03-12
- 发明人: Yusuke Zushi , Tatsuhiro Suzuki , Keiichiro Numakura , Taku Shimomura , Tetsuya Hayashi
- 申请人: NISSAN MOTOR CO., LTD.
- 申请人地址: JP Yokohama-shi
- 专利权人: NISSAN MOTOR CO., LTD.
- 当前专利权人: NISSAN MOTOR CO., LTD.
- 当前专利权人地址: JP Yokohama-shi
- 代理机构: Foley & Lardner LLP
- 国际申请: PCT/JP2015/064743 WO 20150522
- 国际公布: WO2016/189585 WO 20161201
- 主分类号: H02M1/08
- IPC分类号: H02M1/08 ; H02M5/458 ; H02M7/217 ; H02M7/48 ; H03K17/567 ; H02M1/088 ; H02M7/537 ; H03K17/082 ; H03K17/12 ; H03K17/16 ; H02M1/00
摘要:
A power conversion device includes a gate voltage adjustment unit (a detection circuit 12) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q1 to Q2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.
公开/授权文献
- US20180152093A1 POWER CONVERSION DEVICE 公开/授权日:2018-05-31
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