- 专利标题: Magnetic field sensor integrated circuit with integral ferromagnetic material
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申请号: US13424618申请日: 2012-03-20
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公开(公告)号: US10234513B2公开(公告)日: 2019-03-19
- 发明人: Ravi Vig , William P. Taylor , Andreas P. Friedrich , Paul David , Marie-Adelaide Lo , Eric Burdette , Eric Shoemaker , Michael C. Doogue
- 申请人: Ravi Vig , William P. Taylor , Andreas P. Friedrich , Paul David , Marie-Adelaide Lo , Eric Burdette , Eric Shoemaker , Michael C. Doogue
- 申请人地址: US NH Manchester
- 专利权人: Allegro MicroSystems, LLC
- 当前专利权人: Allegro MicroSystems, LLC
- 当前专利权人地址: US NH Manchester
- 代理机构: Daly, Crowley, Mofford & Durkee, LLP
- 主分类号: G01R33/02
- IPC分类号: G01R33/02 ; G01B7/30 ; G01R33/00
摘要:
A magnetic field sensor includes a lead frame, a semiconductor die supporting a magnetic field sensing element, a non-conductive mold material enclosing the die and a portion of the lead frame, a ferromagnetic mold material secured to the non-conductive mold material and a securing mechanism to securely engage the mold materials. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet. The ferromagnetic mold material may be tapered and includes a non-contiguous central region, as may be an aperture or may contain the non-conductive mold material or an overmold material. Further embodiments include die up, lead on chip, and flip-chip arrangements, wafer level techniques to form the concentrator or bias magnet, integrated components, such as capacitors, on the lead frame, and a bias magnet with one or more channels to facilitate overmolding.