Invention Grant
- Patent Title: Film formation method and element
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Application No.: US15159036Application Date: 2016-05-19
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Publication No.: US10235961B2Publication Date: 2019-03-19
- Inventor: Yohei Momma , Takahiro Kawakami , Junpei Momo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2015-109495 20150529
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H05K1/11 ; G09G3/36 ; G06F3/044 ; G06F3/041 ; G02F1/1343 ; G02F1/1333

Abstract:
A novel element, a novel formation method of a film, or a novel formation method of an element is provided. Alternatively, a film including graphene is formed at low cost and high yield. A formation method of a film including graphene includes a first step of forming a film including graphene oxide that includes a first region and a second region by application of a dispersion liquid in which graphene oxide is dispersed over a substrate and removal of dispersion medium from the applied dispersion liquid, a second step of forming a film including graphene by light irradiation to the first region to reduce the first region, and a third step of removing the second region by washing.
Public/Granted literature
- US20160349905A1 FILM FORMATION METHOD AND ELEMENT Public/Granted day:2016-12-01
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