Invention Grant
- Patent Title: Current sense amplifiers, memory devices and methods
-
Application No.: US15592436Application Date: 2017-05-11
-
Publication No.: US10236052B2Publication Date: 2019-03-19
- Inventor: Onegyun Na , Jongtae Kwak , Seong-Hoon Lee , Hoon Choi
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/4091 ; G11C7/06 ; G11C7/02 ; G11C11/4074
Abstract:
A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.
Public/Granted literature
- US20170249985A1 CURRENT SENSE AMPLIFIERS, MEMORY DEVICES AND METHODS Public/Granted day:2017-08-31
Information query
