公开(公告)号：US20170249985A1

公开(公告)日：2017-08-31

申请号：US15592436

申请日：2017-05-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Onegyun Na ,  Jongtae Kwak ,  Seong-Hoon Lee ,  Hoon Choi

IPC: G11C11/4091 ,  G11C11/4074

CPC classification number: G11C11/4091 ,  G11C7/02 ,  G11C7/06 ,  G11C7/062 ,  G11C7/065 ,  G11C11/4074 ,  G11C2207/063 ,  G11C2207/2281

Abstract: A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.

公开(公告)号：US09659631B2

公开(公告)日：2017-05-23

申请号：US14602084

申请日：2015-01-21

Applicant: MICRON TECHNOLOGY, INC

Inventor： Onegyun Na ,  Jongtae Kwak ,  Seong-Hoon Lee ,  Hoon Choi

IPC: G11C7/00 ,  G11C7/22 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/02

CPC classification number: G11C11/4091 ,  G11C7/02 ,  G11C7/06 ,  G11C7/062 ,  G11C7/065 ,  G11C11/4074 ,  G11C2207/063 ,  G11C2207/2281

Abstract: A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.

公开(公告)号：US10236052B2

公开(公告)日：2019-03-19

申请号：US15592436

申请日：2017-05-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Onegyun Na ,  Jongtae Kwak ,  Seong-Hoon Lee ,  Hoon Choi

IPC: G11C7/10 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/02 ,  G11C11/4074

Abstract: A current sense amplifier may include one or more clamping circuits coupled between differential output nodes of the amplifier. The clamping circuits may be enabled during at least a portion of the time that the sense amplifier is sensing the state of a memory cell coupled to a differential input of the sense amplifier. The clamping circuits may be disabled during the time that the sense amplifier is sensing the state of a memory cell at different times in a staggered manner. The clamping circuits may be effecting in making the current sense amplifier less sensitive to noise signals.

公开(公告)号：US09484074B2

公开(公告)日：2016-11-01

申请号：US14258317

申请日：2014-04-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Seong-Hoon Lee ,  Onegyun Na ,  Jongtae Kwak

IPC: G11C7/00 ,  G11C7/02 ,  G11C7/06

CPC classification number: G11C7/065 ,  G11C7/062 ,  G11C2207/063

Abstract: Memories, current mode sense amplifiers, and methods for operating the same are disclosed, including a current mode sense amplifier including cross-coupled p-channel transistors and a load circuit coupled to the cross-coupled p-channel transistors. The load circuit is configured to provide a resistance to control at least in part the loop gain of the current mode sense amplifier, the load circuit including at least passive resistance.

Abstract translation: 公开了一种存储器，电流模式读出放大器及其操作方法，包括一个包括交叉耦合的p沟道晶体管和耦合到交叉耦合的p沟道晶体管的负载电路的电流模式读出放大器。 负载电路被配置为提供至少部分地控制电流模式读出放大器的环路增益的电阻，负载电路至少包括被动电阻。