Invention Grant
- Patent Title: RF amplifier with dual frequency response capacitor
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Application No.: US15667195Application Date: 2017-08-02
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Publication No.: US10236833B2Publication Date: 2019-03-19
- Inventor: Bayaner Arigong , Richard Wilson , Haedong Jang , Frank Trang , Timothy Canning , Rongguo Zhou , Bjoern Herrmann
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03F3/14
- IPC: H03F3/14 ; H03F1/56 ; H03F3/195 ; H01L23/66

Abstract:
An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.
Public/Granted literature
- US20190044483A1 RF Amplifier with Dual Frequency Response Capacitor Public/Granted day:2019-02-07
Information query
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