RF amplifier package with biasing strip

    公开(公告)号:US10141303B1

    公开(公告)日:2018-11-27

    申请号:US15709532

    申请日:2017-09-20

    Abstract: An RF semiconductor amplifier package includes a flange shaped body section, an electrically conductive die pad centrally located on the body section, and an electrically insulating window frame disposed on an upper surface of the body section. A first electrically conductive lead is disposed on the window frame adjacent to a first side of the die pad and extends away from the first side of the die pad towards a first edge side of the body section. A second electrically conductive lead is disposed on the window frame adjacent to a second side of the die pad and extends away from the second side of the die pad towards a second edge side of the body section. A first electrically conductive biasing strip is disposed on the window frame, continuously connected to the second lead, and extends along and a third side of the die pad.

    Reflection Type Phase Shifter with Active Device Tuning

    公开(公告)号:US20180269845A1

    公开(公告)日:2018-09-20

    申请号:US15460297

    申请日:2017-03-16

    CPC classification number: H03H7/20 H01L29/7816 H03H7/18 H03H7/19 H03H11/20

    Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

    RF amplifier with impedance matching components monolithically integrated in transistor die

    公开(公告)号:US10707818B1

    公开(公告)日:2020-07-07

    申请号:US16219025

    申请日:2018-12-13

    Abstract: A packaged amplifier circuit includes an RF package with a die pad, and RF input and output leads extending away from the die pad opposite directions. An RF transistor die is mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead. A passive electrical connector is integrally formed in the RF transistor die. The passive electrical connector includes a first end connection point closer to the first outer edge side, and a second end connection point closer to the second outer edge side. A first discrete reactive device is mounted on the die pad between the first outer edge side and the first RF lead. The passive electrical connector electrically couples the first discrete reactive device to the second RF lead.

    DEVICES AND METHODS THAT FACILITATE POWER AMPLIFIER OFF STATE PERFORMANCE
    8.
    发明申请
    DEVICES AND METHODS THAT FACILITATE POWER AMPLIFIER OFF STATE PERFORMANCE 审中-公开
    使功率放大器关闭状态的设备和方法

    公开(公告)号:US20170063308A1

    公开(公告)日:2017-03-02

    申请号:US14840963

    申请日:2015-08-31

    Abstract: A peaking amplifier is disclosed. The peaking amplifier includes a driver stage, a final stage, and an interstage matching network. The driver stage has a load impedance and is configured to generate a driver output based on an input signal. The final stage has a final stage input impedance and is configured to generate a peaking output based on the driver output. The interstage matching network is coupled to the driver stage and the final stage. The interstage matching network is configured to transform the final stage input impedance to the load impedance for the driver stage when the peaking amplifier is ON and to provide a short to an input of the final stage when the peaking amplifier is in an OFF state.

    Abstract translation: 公开了一种峰值放大器。 峰值放大器包括驱动级,最后级和级间匹配网络。 驱动器级具有负载阻抗,并且被配置为基于输入信号产生驱动器输出。 最终阶段具有最终级输入阻抗,并且被配置为基于驱动器输出生成峰值输出。 阶段匹配网络耦合到驱动阶段和最后阶段。 阶段匹配网络被配置为当峰化放大器导通时将最终级输入阻抗转换为驱动级的负载阻抗,并且当峰化放大器处于关闭状态时,将最终级输入阻抗转换为最终级的输入。

    Broadband harmonic matching network

    公开(公告)号:US10122336B1

    公开(公告)日:2018-11-06

    申请号:US15709593

    申请日:2017-09-20

    Abstract: An amplifier circuit includes an RF amplifier that is configured to amplify an RF signal between a first terminal and a second terminal across an RF frequency range. The amplifier circuit includes a multi-stage impedance matching network having a broadband impedance transformer, a phase shifter, and a high-pass impedance transformer connected in series with one another between a first port of the amplifier circuit and the first terminal. The broadband impedance transformer provides impedance transformation in the RF frequency range. The phase shifter shifts a phase output port reflection coefficient in a second order harmonic frequency range that overlaps with a second order harmonic of the fundamental RF frequency. The high-pass impedance transformer transmits an RF signal in the RF frequency range while providing impedance transformation in the RF frequency range and transmits RF signals in the second order harmonic frequency range with low impedance.

    Compact class-F chip and wire matching topology

    公开(公告)号:US10003311B1

    公开(公告)日:2018-06-19

    申请号:US15386039

    申请日:2016-12-21

    Abstract: An amplifier circuit includes an RF input port, an RF output port, a reference potential port, and an RF amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the RF output port. A first inductor is electrically connected in series between the first output terminal and the RF output port, a first LC resonator is directly electrically connected between the first output terminal and the reference potential port, and a second LC resonator is directly electrically connected between the first output terminal and the reference potential port. The first LC resonator is configured to compensate for an output capacitance of the RF amplifier at a center frequency of the RF signal. The second LC resonator is configured to compensate for a second order harmonic of the RF signal.

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