Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15845079Application Date: 2017-12-18
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Publication No.: US10243006B2Publication Date: 2019-03-26
- Inventor: Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2008-298000 20081121
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12 ; H01L29/786 ; H01L29/423 ; H01L29/49 ; G02F1/1362 ; H01L27/32

Abstract:
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
Public/Granted literature
- US20180122834A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-05-03
Information query
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