公开(公告)号：US12300820B2

公开(公告)日：2025-05-13

申请号：US18219951

申请日：2023-07-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei Oguni ,  Takeshi Osada ,  Toshihiko Takeuchi ,  Kuniharu Nomoto

IPC: H01M4/587 ,  B82Y30/00 ,  B82Y40/00 ,  C25D5/48 ,  C25D5/50 ,  C25D13/02 ,  C25D13/12 ,  H01M4/04 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/66 ,  H01M4/70

Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

公开(公告)号：US12009434B2

公开(公告)日：2024-06-11

申请号：US18098769

申请日：2023-01-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/477 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/47635 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

公开(公告)号：US11967831B2

公开(公告)日：2024-04-23

申请号：US17697296

申请日：2022-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi Osada

IPC: H02J7/00 ,  G06N3/08 ,  H02J7/02 ,  H02J50/12 ,  H02J50/80

CPC classification number: H02J50/12 ,  G06N3/08 ,  H02J7/00034 ,  H02J7/00302 ,  H02J7/02 ,  H02J50/80

Abstract: A novel semiconductor device or a semiconductor device capable of preventing overcharging is provided. A power receiving portion has a function of generating a signal for canceling a wireless signal transmitted from a power feeding portion when the charging is completed. Specifically, when the remaining battery capacity of the power receiving portion is one hundred percent or higher than or equal to a predetermined reference value, the power receiving portion has a function of generating an electromagnetic wave for canceling an electromagnetic wave transmitted from the power feeding portion. Thus, a magnetic field for canceling a magnetic field formed of the electromagnetic wave transmitted from the power feeding portion is formed, so that overcurrent in the power receiving portion can be prevented.

公开(公告)号：US10544041B2

公开(公告)日：2020-01-28

申请号：US15810953

申请日：2017-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei Oguni ,  Takeshi Osada ,  Toshihiko Takeuchi

IPC: B82Y30/00 ,  C25D13/22 ,  H01M4/04 ,  H01M4/13 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/587 ,  H01M10/0525 ,  C25D13/02 ,  H01M4/02

Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

公开(公告)号：US10243006B2

公开(公告)日：2019-03-26

申请号：US15845079

申请日：2017-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  G02F1/1362 ,  H01L27/32

Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

公开(公告)号：US09601603B2

公开(公告)日：2017-03-21

申请号：US15071674

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/477 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4763 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/47635 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

公开(公告)号：US09590110B2

公开(公告)日：2017-03-07

申请号：US14476775

申请日：2014-09-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi Osada

IPC: H01L29/786 ,  H03F1/30 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H03F1/304

Abstract: A sensor circuit with high sensitivity to ultraviolet light. Ultraviolet light is detected using a transistor containing an oxide semiconductor. When the transistor is irradiated with ultraviolet light or light including ultraviolet light, the drain current of the transistor depends on the intensity of the ultraviolet light. Data on the intensity of ultraviolet light is obtained by measuring the drain current of the transistor. Since the band gap of an oxide semiconductor is wider than that of silicon, the sensitivity to light with a wavelength in the ultraviolet region can be increased. Furthermore, an increase in dark current caused by temperature rise in the sensor circuit can be suppressed, resulting in a wider allowable ambient temperature range of the sensor circuit.

Abstract translation: 对紫外线具有高灵敏度的传感器电路。 使用含有氧化物半导体的晶体管检测紫外线。 当用紫外线或包括紫外线的光照射晶体管时，晶体管的漏极电流取决于紫外光的强度。 通过测量晶体管的漏极电流来获得关于紫外光强度的数据。 由于氧化物半导体的带隙比硅更宽，所以可以提高对紫外线区域的波长的光的敏感度。 此外，可以抑制由传感器电路中的温度升高引起的暗电流的增加，导致传感器电路的允许环境温度范围更宽。

公开(公告)号：US09570619B2

公开(公告)日：2017-02-14

申请号：US14275522

申请日：2014-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L27/14 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  G02F1/1362 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869

Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

Abstract translation: 由于显示装置具有更高的清晰度，因此像素数量增加，因此栅极线和信号线的数量增加。 当栅极线和信号线的数量增加时，难以通过结合等安装包括用于驱动栅极线和信号线的驱动电路的IC芯片，由此增加制造成本。 用于驱动像素部分的像素部分和驱动电路设置在同一基板上，并且驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管包括夹在栅电极之间的氧化物半导体。 在氧化物半导体和设置在氧化物半导体上的栅电极之间设置沟道保护层。 像素部分和驱动电路设置在相同的基板上，这导致制造成本的降低。

公开(公告)号：US20240413250A1

公开(公告)日：2024-12-12

申请号：US18736777

申请日：2024-06-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/477 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

公开(公告)号：US11898261B2

公开(公告)日：2024-02-13

申请号：US17569540

申请日：2022-01-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei Oguni ,  Takeshi Osada ,  Toshihiko Takeuchi

IPC: C25D13/02 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/36 ,  H01M4/587 ,  H01M4/04 ,  H01M4/134 ,  H01M10/0525 ,  H01M4/13 ,  H01M4/1395 ,  C25D13/22 ,  H01M4/02 ,  B82Y30/00

CPC classification number: C25D13/02 ,  B82Y30/00 ,  C25D13/22 ,  H01M4/0416 ,  H01M4/0452 ,  H01M4/13 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/587 ,  H01M10/0525 ,  H01M2004/027

Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.