- Patent Title: Device layer thin-film transfer to thermally conductive substrate
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Application No.: US15944222Application Date: 2018-04-03
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Publication No.: US10243091B2Publication Date: 2019-03-26
- Inventor: Bing Dang , John U. Knickerbocker , Steven Lorenz Wright , Cornelia Tsang Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Fleit Gibbons Gutman Bongini Bianco PL
- Agent Jon A. Gibbons
- Main IPC: H01L31/024
- IPC: H01L31/024 ; H01L31/18 ; H01J1/30
Abstract:
A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.
Public/Granted literature
- US20180226516A1 DEVICE LAYER THIN-FILM TRANSFER TO THERMALLY CONDUCTIVE SUBSTRATE Public/Granted day:2018-08-09
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