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公开(公告)号：US11539081B2
公开(公告)日：2022-12-27
申请号：US16800327
申请日：2020-02-25
发明人： Qianwen Chen , Bing Dang , John U. Knickerbocker
IPC分类号： H01M10/0585 , H01M10/052 , H01M10/04 , A61B5/00
摘要： A method for integrating a thin film microbattery with electronic circuitry includes forming a release layer over a handler, forming a thin film microbattery over the release layer of the handler, removing the thin film microbattery from the handler, depositing the thin film microbattery on an interposer, forming electronic circuitry on the interposer, and sealing the thin film microbattery and the electronic circuitry to create individual microbattery modules.
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公开(公告)号：US11411272B2
公开(公告)日：2022-08-09
申请号：US15811231
申请日：2017-11-13
发明人： Paul S. Andry , Bing Dang , John U. Knickerbocker , Yang Liu , Jae-Woong Nah , Adinath Narasgond , Bucknell C. Webb
IPC分类号： H01M50/10 , H01M50/209 , H01M6/40 , H01M10/04
摘要： A micro-battery is provided in which a metallic sealing layer is used to provide a hermetic seal between an anode side of the micro-battery and the cathode side of the micro-battery. In accordance with the present application, the metallic sealing layer is formed around a perimeter of each metallic anode structure located on the anode side and then the metallic sealing layer is bonded to a solderable metal layer of a wall structure present on the cathode side. The wall structure contains a cavity that exposes a metallic current collector structure, the cavity is filled with battery materials.
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公开(公告)号：US11348833B2
公开(公告)日：2022-05-31
申请号：US16693526
申请日：2019-11-25
IPC分类号： H01L23/48 , H01L21/56 , H01L23/538 , H01L21/48 , H01L25/065 , H01L21/78 , H01L23/31 , H01L23/29 , H01L23/00
摘要： A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.
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公开(公告)号：US11055459B2
公开(公告)日：2021-07-06
申请号：US16433675
申请日：2019-06-06
发明人： Qianwen Chen , Li-Wen Hung , Wanki Kim , John U. Knickerbocker , Kenneth P. Rodbell , Robert L. Wisnieff
IPC分类号： H01L25/065 , H01L25/07 , G06F30/331 , H01L23/31 , H01L25/00 , H01L23/00 , H01L21/683 , H01L25/11 , H01L21/56 , H01L25/18 , G06F15/78 , G06F15/80
摘要： A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.
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公开(公告)号：US11000474B2
公开(公告)日：2021-05-11
申请号：US15852943
申请日：2017-12-22
发明人： S. Jay Chey , Bing Dang , John U. Knickerbocker , Kenneth F. Latzko , Joana Sofia Branquinho Teresa Maria , Lavanya Turlapati , Bucknell C. Webb , Steven L. Wright
摘要： Electromechanical substance delivery devices are provided which implement low-power electromechanical release mechanisms for controlled delivery of substances such as drugs and medication. For example, an electromechanical device includes a substrate having a cavity formed in a surface of the substrate, a membrane disposed on the surface of the substrate covering an opening of the cavity, and a seal disposed between the membrane and the surface of the substrate. The seal surrounds the opening of the cavity, and the seal and membrane are configured to enclose the cavity and retain a substance within the cavity. An electrode structure is configured to locally heat a portion of the membrane in response to a control voltage applied to the electrode structure, and create a stress that causes a rupture in the locally heated portion of the membrane to release the substance from within the cavity.
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6.发明授权公开(公告)号：US10998217B2
公开(公告)日：2021-05-04
申请号：US15900178
申请日：2018-02-20
IPC分类号： H01L21/683 , H01L21/02 , C08G59/06 , C09J163/00 , C09J171/00 , C08L63/00 , C08L71/00 , C08K3/04 , C09J9/00
摘要： A bonding material including a phenoxy resin thermoplastic component, and a carbon black filler component. The carbon black filler component is present in an amount greater than 1 wt. %. The carbon black filler converts the phenoxy resin thermoplastic component from a material that transmits infra-red (IR) wavelengths to a material that absorbs a substantial portion of infra-red (IR) wavelengths.
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公开(公告)号：US20200185781A1
公开(公告)日：2020-06-11
申请号：US16787167
申请日：2020-02-11
发明人： Qianwen Chen , Bing Dang , John U. Knickerbocker
IPC分类号： H01M10/0585 , A61B5/00 , H01M10/052 , H01M10/04
摘要： A method for integrating a thin film microbattery with electronic circuitry includes forming a release layer over a handler, forming a thin film microbattery over the release layer of the handler, removing the thin film microbattery from the handler, depositing the thin film microbattery on an interposer, forming electronic circuitry on the interposer, and sealing the thin film microbattery and the electronic circuitry to create individual microbattery modules.
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公开(公告)号：US10679887B2
公开(公告)日：2020-06-09
申请号：US15935537
申请日：2018-03-26
发明人： Paul S. Andry , Bing Dang , Jeffrey Donald Gelorme , Li-Wen Hung , John U. Knickerbocker , Cornelia Tsang Yang
IPC分类号： H01L21/683 , H01L21/78
摘要： Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
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公开(公告)号：US10658182B2
公开(公告)日：2020-05-19
申请号：US16551377
申请日：2019-08-26
发明人： Russell A. Budd , Qianwen Chen , Bing Dang , Jeffrey D. Gelorme , Li-wen Hung , John U. Knickerbocker
IPC分类号： H01L21/20 , B24B7/22 , H01L21/683 , H01L23/544 , H01L23/498 , H01L21/56
摘要： Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.
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公开(公告)号：US10651507B2
公开(公告)日：2020-05-12
申请号：US15802109
申请日：2017-11-02
发明人： Qianwen Chen , Bing Dang , John U. Knickerbocker
IPC分类号： H01M10/0585 , H01M10/0525 , A61B5/00 , H01M10/04 , H01M10/052
摘要： A method for integrating a thin film microbattery with electronic circuitry includes forming a release layer over a handler, forming a thin film microbattery over the release layer of the handler, removing the thin film microbattery from the handler, depositing the thin film microbattery on an interposer, forming electronic circuitry on the interposer, and sealing the thin film microbattery and the electronic circuitry to create individual microbattery modules.
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