发明授权
- 专利标题: Resistive element
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申请号: US15078402申请日: 2016-03-23
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公开(公告)号: US10247788B2公开(公告)日: 2019-04-02
- 发明人: Udo Ausserlechner
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: G01R33/07
- IPC分类号: G01R33/07 ; G01P15/12 ; G01R33/00
摘要:
A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor substrate includes a first main surface area. The resistive region extends in a lateral direction parallel to the main surface area and in a vertical direction perpendicular to the main surface area, and includes a first piezo-resistive coefficient for a current flow in the lateral direction and a second piezo-resistive coefficient for a current flow in the vertical direction. The first contact structure contacts a portion of a first face of the resistive region and the second contact structure contacts a portion of a second face of the resistive region. The resistive element generates a current flow distribution within the resistive region having a lateral component and a vertical component that results in a piezo-resistive coefficient of the resistive element.
公开/授权文献
- US20160245880A1 RESISTIVE ELEMENT 公开/授权日:2016-08-25
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