- Patent Title: Semiconductor device and method for driving semiconductor device
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Application No.: US14539067Application Date: 2014-11-12
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Publication No.: US10249347B2Publication Date: 2019-04-02
- Inventor: Kiyoshi Kato
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-234761 20131113
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C5/14 ; G11C11/404 ; G11C11/4074

Abstract:
A normally-off state of an OS transistor is maintained or an on-state current thereof is increased without additionally generating a positive potential or a negative potential. When data is written to a node connecting an OS transistor and a capacitor, a potential supplied to the other side of the capacitor is set to an L level, and when the data is retained, the potential is switched from the L level to an H level. In addition, a power switch for a volatile memory circuit is provided on a low power supply potential side so that the supply of a power supply voltage can be stopped. Accordingly, at the time of data retention, a source and a drain of the OS transistor can be set at a high potential, whereby the normally-off state can be maintained and the on-state current can be increased.
Public/Granted literature
- US20150131367A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE Public/Granted day:2015-05-14
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