Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
-
Application No.: US15041356Application Date: 2016-02-11
-
Publication No.: US10249644B2Publication Date: 2019-04-02
- Inventor: Hiroyuki Miyake , Koji Kusunoki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2015-026867 20150213; JP2015-026947 20150213
- Main IPC: G02F1/1368
- IPC: G02F1/1368 ; H01L27/12 ; H01L29/786 ; H01L29/24 ; G02F1/1343 ; G02F1/1345 ; G02F1/1362

Abstract:
An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display device with high yield. A pixel transistor and a driver transistor are formed over a substrate having an insulating surface in the same step. A pixel electrode electrically connected to the pixel transistor is one electrode. The other electrode is supplied with a fixed potential. A region where a pair of electrodes overlap with each other is used as a capacitor. Accordingly, the number of masks and steps are reduced to provide a display device with high productivity.
Public/Granted literature
- US20160240562A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2016-08-18
Information query
IPC分类: