Invention Grant
- Patent Title: Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor
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Application No.: US15937632Application Date: 2018-03-27
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Publication No.: US10249677B2Publication Date: 2019-04-02
- Inventor: Jung-Chak Ahn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0091293 20050929
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
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