- Patent Title: Semiconductor device, electronic component, and electronic device
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Application No.: US15427815Application Date: 2017-02-08
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Publication No.: US10250247B2Publication Date: 2019-04-02
- Inventor: Kiyoshi Kato , Yutaka Shionoiri , Tomoaki Atsumi , Takanori Matsuzaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2016-023593 20160210; JP2016-077225 20160407
- Main IPC: H03K5/24
- IPC: H03K5/24 ; G11C5/14 ; H01L21/78 ; H01L27/00 ; H01L49/02 ; H01L23/498 ; H01L27/108 ; H01L27/146

Abstract:
Provided is a semiconductor device that can directly compare two negative potentials. The semiconductor device includes a first to a third transistor and a load and is configured to compare a first negative potential and a second negative potential. The first negative potential and the second negative potential are input to a gate of the first transistor and a gate of the second transistor, respectively. Each drain of the first transistor and the second transistor is electrically connected to the load. The third transistor serves as a current source. The first transistor and the second transistor each include a backgate. A positive potential is input to the backgates.
Public/Granted literature
- US20170230041A1 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE Public/Granted day:2017-08-10
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