Invention Grant
- Patent Title: Microelectronic devices designed with ultra-high-k dielectric capacitors integrated with package substrates
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Application No.: US15639873Application Date: 2017-06-30
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Publication No.: US10251272B2Publication Date: 2019-04-02
- Inventor: Aleksandar Aleksov , Feras Eid , Thomas L. Sounart , Georgios C. Dogiamis , Johanna M. Swan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H05K3/46 ; H01L23/498 ; H01L21/48 ; H05K3/12 ; H05K3/00 ; H05K3/22
Abstract:
Embodiments of the invention include a microelectronic device that includes a plurality of organic dielectric layers and a capacitor that is integrated with a first organic dielectric layer of the plurality of organic dielectric layers. The capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
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