Invention Grant
- Patent Title: Defect measuring device for wafers
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Application No.: US15328852Application Date: 2015-07-28
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Publication No.: US10255669B2Publication Date: 2019-04-09
- Inventor: Chi-Hun Kang , Kee-Yun Han
- Applicant: LG SILTRON INC.
- Applicant Address: KR
- Assignee: SK Siltron Co., Ltd.
- Current Assignee: SK Siltron Co., Ltd.
- Current Assignee Address: KR
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2014-0096449 20140729
- International Application: PCT/KR2015/007882 WO 20150728
- International Announcement: WO2016/018049 WO 20160204
- Main IPC: H04N9/47
- IPC: H04N9/47 ; G06T7/00 ; G01N21/94 ; G01N21/95 ; H04N7/18 ; H01L21/67 ; H01L21/66

Abstract:
Provided is a device for measuring wafer defects, which prevents damage of a wafer and also measures defects at upper, lower and side surfaces of the wafer simultaneously.The device for measuring wafer defects includes a lower blower configured to inject air to a lower surface of a wafer to float the wafer; an upper blower provided to be moved up and down with respect to the lower blower and configured to inject the air to an upper surface of the wafer to fix the wafer; an upper contamination measuring part provided at an upper side of the upper blower and configured to detect contamination on the upper surface of the wafer; a lower contamination measuring part provided at a lower side of the lower blower and configured to detect contamination on the lower surface of the wafer; and a side contamination measuring part provided between the upper and lower blowers and configured to detect contamination on a side surface of the wafer.
Public/Granted literature
- US20170213333A1 DEFECT MEASURING DEVICE FOR WAFERS Public/Granted day:2017-07-27
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