- 专利标题： Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having said oxide, and thin-film transistor
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申请号： US15290715申请日： 2016-10-11
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公开(公告)号： US10256091B2公开(公告)日： 2019-04-09
- 发明人: Hiroaki Tao , Aya Miki , Shinya Morita , Satoshi Yasuno , Toshihiro Kugimiya , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
- 申请人： Kobe Steel, Ltd. , Samsung Display Co., Ltd.
- 申请人地址： JP Kobe-shi KR Yongin
- 专利权人： Kobe Steel, Ltd.,Samsung Display Co., Ltd.
- 当前专利权人： Kobe Steel, Ltd.,Samsung Display Co., Ltd.
- 当前专利权人地址： JP Kobe-shi KR Yongin
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-052179 20110309; JP2011-289740 20111228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L29/786 ; H01L29/12 ; H01L29/66 ; H01L21/477 ; G02F1/1368
摘要：
The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≤0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])≤0.3 (1), [In]/([In]+[Zn]+[Sn])≤1.4×{[Zn]/([Zn]+[Sn])}−0.5 (2), [Zn]/([In]+[Zn]+[Sn])≤0.83 (3), and 0.1≤[In]/([In]+[Zn]+[Sn]) (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
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