Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US15786366Application Date: 2017-10-17
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Publication No.: US10256135B2Publication Date: 2019-04-09
- Inventor: Tatsuya Usami
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-219836 20161110
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L21/762 ; H01L21/764 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L21/74 ; H01L29/06 ; H01L21/285
Abstract:
To provide a semiconductor device having a substrate contact in a deep trench thereof and having an improved characteristic. A PVD-metal film (metal film formed by PVD) is used as a first barrier metal film which is a lowermost layer barrier metal film formed in a deep trench penetrating an n type epitaxial layer and a reaching a layer therebelow. Such a configuration makes it possible to stably form a metal silicide layer at a boundary between the PVD-metal film and a silicon layer therebelow (or silicon substrate) and thereby stabilize the contact resistance.
Public/Granted literature
- US20180130900A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-05-10
Information query
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