Invention Grant
- Patent Title: Interconnect structures with intermetallic palladium joints and associated systems and methods
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Application No.: US16127624Application Date: 2018-09-11
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Publication No.: US10256216B2Publication Date: 2019-04-09
- Inventor: Jaspreet S. Gandhi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L25/18

Abstract:
Interconnect structures with intermetallic palladium joints are disclosed herein. In one embodiment, a method of forming an interconnect structure includes depositing a first conductive material comprising nickel on a first conductive surface of a first die, and depositing a second conductive material comprising nickel on a second conductive surface of a second die spaced apart from the first surface. The method further includes depositing a third conductive material on the second conductive material, and thermally compressing tin/solder between the first and third conductive materials to form an intermetallic palladium joint that extends between the first conductive material and the second conductive material such that one end of the intermetallic palladium joint is bonded directly to the first conductive material and an opposite end of the intermetallic palladium joint is bonded directly to the second conductive material.
Public/Granted literature
- US20190013296A1 INTERCONNECT STRUCTURES WITH INTERMETALLIC PALLADIUM JOINTS AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2019-01-10
Information query
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