A semiconductor device provided herein includes: a semiconductor substrate; an upper main electrode provided above the semiconductor substrate; a sense anode electrode provided above the semiconductor substrate; a resistance layer provided above the semiconductor substrate and having a resistivity higher than the sense anode electrode; a lower main electrode provided below the semiconductor substrate. The semiconductor substrate includes a switching element and a sense diode. The switching element is connected between the upper main electrode and the lower main electrode. The sense diode comprises a first anode region of a p-type connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode.