Invention Grant
- Patent Title: Vertical transistor with air-gap spacer
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Application No.: US15627109Application Date: 2017-06-19
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Publication No.: US10256302B2Publication Date: 2019-04-09
- Inventor: Kangguo Cheng , Tak H. Ning
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L21/764 ; H01L23/535 ; H01L29/417 ; H01L29/423 ; H01L29/786 ; H01L27/12 ; H01L21/768
Abstract:
A vertical transistor has a first air-gap spacer between a gate and a bottom source/drain region, and a second air-gap spacer between the gate and the contact to the bottom source/drain region. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.
Public/Granted literature
- US20170294537A1 VERTICAL TRANSISTOR WITH AIR-GAP SPACER Public/Granted day:2017-10-12
Information query
IPC分类:
