Invention Grant
- Patent Title: Co-doping process for n-MOS source drain application
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Application No.: US15926921Application Date: 2018-03-20
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Publication No.: US10256322B2Publication Date: 2019-04-09
- Inventor: Xinyu Bao , Zhiyuan Ye , Hua Chung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L29/78 ; H01L29/167 ; H01L29/08 ; H01L29/06

Abstract:
A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.
Public/Granted literature
- US20180286962A1 CO-DOPING PROCESS FOR N-MOS SOURCE DRAIN APPLICATION Public/Granted day:2018-10-04
Information query
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