Invention Grant
- Patent Title: Ramp signal generator of image sensor, and image sensor including same
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Application No.: US15868588Application Date: 2018-01-11
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Publication No.: US10257458B2Publication Date: 2019-04-09
- Inventor: Kyu-Ik Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0071392 20170608
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H04N5/376 ; H04N5/374 ; H01L27/146

Abstract:
A ramp signal generator is provided. The ramp signal generator includes a bias generation circuit, a transferring switch, a sampling capacitor, a current cell circuit, a current to voltage converter and a tuning circuit. The bias generation circuit generates a bias voltage. The transferring switch transfers the bias voltage to a sampling node in response to a first switching control signal. The sampling capacitor samples the bias voltage. The current cell circuit provides a first output node with a first ramping current in response to a sampled bias voltage and switching code pairs. The current to voltage converter includes a first load resistor to convert the first ramping current to a first ramp signal. The tuning circuit includes a capacitor that couples the sampled bias voltage to the first ramp signal, and adjusts a degree of nonlinearity of the first ramp signal in response to a tuning signal.
Public/Granted literature
- US20180359443A1 RAMP SIGNAL GENERATOR OF IMAGE SENSOR, AND IMAGE SENSOR INCLUDING SAME Public/Granted day:2018-12-13
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