Invention Grant
- Patent Title: Semiconductor device and method for driving the same
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Application No.: US15056279Application Date: 2016-02-29
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Publication No.: US10262570B2Publication Date: 2019-04-16
- Inventor: Hiroyuki Miyake
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2015-043113 20150305
- Main IPC: G09G3/20
- IPC: G09G3/20 ; G09G3/3233 ; H05B33/08

Abstract:
A semiconductor device includes a transistor including a first gate (front gate) and a second gate (back gate) overlapping with each other with a semiconductor film therebetween, and a display element. The transistor and the display element are electrically connected to each other. The first gate is supplied with one of 2N−k potentials. The second gate is supplied with one of 2k potentials. One of 2N−k potentials and one of 2k potentials are obtained in such a manner that N-bit digital data is divided into (N−k)-bit digital data and k-bit digital data and they are subjected to D/A conversion. At this time, the total number of gray level power supply lines used for D/A conversion is equal to the sum of 2N−k and 2k. This is smaller than 2N, which the total number of the gray level power supply lines usually needed for D/A conversion of N-bit digital data.
Public/Granted literature
- US20160260373A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME Public/Granted day:2016-09-08
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