- 专利标题： Method of fabricating electrodes, method of fabricating thin film transistor, method of fabricating array substrate, thin film transistor, array substrate, and display apparatus
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申请号： US15741737申请日： 2017-06-30
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公开(公告)号： US10262860B2公开(公告)日： 2019-04-16
- 发明人: Liangchen Yan , Xiaoguang Xu , Linfeng Lan , Lei Wang , Junbiao Peng
- 申请人： BOE TECHNOLOGY GROUP CO., LTD. , South China University of Technology
- 申请人地址： CN Beijing CN Guangzhou, Guangdong
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.,South China University of TechnoIogy
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.,South China University of TechnoIogy
- 当前专利权人地址： CN Beijing CN Guangzhou, Guangdong
- 代理机构： Intellectual Valley Law, P.C.
- 优先权： CN201610936120 20161101
- 国际申请： PCT/CN2017/091131 WO 20170630
- 国际公布： WO2018/082327 WO 20180511
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/02 ; H01L29/417 ; H01L27/12 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/786
摘要：
The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.
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