III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

Invention Grant

US10263073B2 III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof 有权

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Patent Title: III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
Application No.: US15397508

Application Date: 2017-01-03
Publication No.: US10263073B2

Publication Date: 2019-04-16
Inventor: Mark Van Dal , Gerben Doornbos , Matthias Passlack , Martin Christopher Holland
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee Address: TW Hsinchu
Agency: McDermott Will & Emery LLP
Main IPC: H01L21/306
IPC: H01L21/306 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/20 ; B82Y10/00 ; H01L29/10 ; H01L29/04

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

Abstract:

A gate-all-around field effect transistor (GAA FET) includes an InAs nano-wire as a channel layer, a gate dielectric layer wrapping the InAs nano-wire, and a gate electrode metal layer formed on the gate dielectric layer. The InAs nano-wire has first to fourth major surfaces three convex-rounded corner surfaces and one concave-rounded corner surface.

Public/Granted literature

US20180151669A1 III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2018-05-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）