Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same, array substrate and display device
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Application No.: US15941195Application Date: 2018-03-30
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Publication No.: US10263092B2Publication Date: 2019-04-16
- Inventor: Haixu Li , Zhanfeng Cao , Qi Yao , Jianguo Wang , Dapeng Xue
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201710527573 20170630
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/45 ; H01L29/66 ; H01L29/786 ; H01L27/12

Abstract:
A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.
Public/Granted literature
- US20190006482A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2019-01-03
Information query
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