Invention Grant
- Patent Title: Circuit arrangement and method for gate-controlled power semiconductor devices
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Application No.: US15060645Application Date: 2016-03-04
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Publication No.: US10263506B2Publication Date: 2019-04-16
- Inventor: Thomas Brueckner , Roland Jakob
- Applicant: GE Energy Power Conversion Technology Ltd
- Applicant Address: GB Rugby
- Assignee: GE ENERGY POWER CONVERSION TECHNOLOGY LTD
- Current Assignee: GE ENERGY POWER CONVERSION TECHNOLOGY LTD
- Current Assignee Address: GB Rugby
- Agency: GE Global Patent Operation
- Agent Scott R. Stanley
- Priority: DE102015103247 20150305
- Main IPC: H02M1/32
- IPC: H02M1/32 ; H03K17/081 ; H03K17/082 ; H02M7/537 ; H03K17/0814 ; H02M1/088

Abstract:
A switch module includes a collector connection, an emitter connection, and a gate connection. The switch module includes a plurality of parallel connected switching elements, e.g., insulated-gate bipolar transistors, each having a collector electrode electrically connected to the collector connection, an emitter electrode electrically connected to the emitter connection, and a gate electrode electrically connected to the gate connection. A fault protection device is operatively electrically connected between the gate connection and the switching elements and comprises passive electrical components which are selected such that in the event of a fault in at least one of the plurality of switching elements, a gate-emitter voltage is provided to the gate electrodes of non-faulty switching elements in a passive manner.
Public/Granted literature
- US20160261180A1 GE Energy Power Conversion Technology Ltd Public/Granted day:2016-09-08
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