公开(公告)号：US10263506B2

公开(公告)日：2019-04-16

申请号：US15060645

申请日：2016-03-04

Applicant: GE Energy Power Conversion Technology Ltd

Inventor： Thomas Brueckner ,  Roland Jakob

IPC: H02M1/32 ,  H03K17/081 ,  H03K17/082 ,  H02M7/537 ,  H03K17/0814 ,  H02M1/088

Abstract: A switch module includes a collector connection, an emitter connection, and a gate connection. The switch module includes a plurality of parallel connected switching elements, e.g., insulated-gate bipolar transistors, each having a collector electrode electrically connected to the collector connection, an emitter electrode electrically connected to the emitter connection, and a gate electrode electrically connected to the gate connection. A fault protection device is operatively electrically connected between the gate connection and the switching elements and comprises passive electrical components which are selected such that in the event of a fault in at least one of the plurality of switching elements, a gate-emitter voltage is provided to the gate electrodes of non-faulty switching elements in a passive manner.

公开(公告)号：US09806599B2

公开(公告)日：2017-10-31

申请号：US15182746

申请日：2016-06-15

Applicant: GE Energy Power Conversion Technology Ltd

Inventor： Martin Geske ,  Joerg Janning ,  Thomas Brueckner ,  Roland Jakob

IPC: H02M7/483 ,  H02M7/44 ,  H02M7/04 ,  H02M1/32 ,  H02H9/04 ,  H02H7/12 ,  H01T15/00 ,  H01T1/14 ,  H01T2/02

CPC classification number: H02M1/32 ,  H01T1/14 ,  H01T2/02 ,  H01T15/00 ,  H02H7/12 ,  H02H9/041 ,  H02M7/04 ,  H02M7/44 ,  H02M7/483 ,  H02M2001/325 ,  H02M2007/4835

Abstract: A short-circuit device and a protection method for a submodule for a power converter are disclosed. The submodule includes a bridge circuit having at least one power semiconductor branch extending between a first and a second DC voltage node and at least one controllable power semiconductor switch disposed therein to which a freewheeling diode is connected in anti-parallel, and a capacitor connected in parallel to the bridge circuit. The short-circuit device has at least one selected of the freewheeling diodes anti-parallel to the power semiconductor switches of the bridge circuit, wherein the at least one selected freewheeling diode is manufactured in press pack design and rated such that, when a fault occurs in the submodule, the at least one selected freewheeling diode breaks down due to the fault conditions and provides a durable, stable, low-impedance short circuit path between a first and a second AC voltage connection of the submodule.